View AUIRFB3207_4857600.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

AUTOMOTIVE GRADE
PD - 96322
HEXFET(R) Power MOSFET
Features
l l l l l l l
AUIRFB3207
75V 3.6m 4.5m 170A 75A
Advanced Process Technology Ultra Low On-Resistance 175C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified *
D
V(BR)DSS RDS(on) typ. max. ID (Silicon Limited) ID (Package Limited)
G S
c
Description
Specifically designed for Automotive applications, this HEXFET(R) Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
G
S D G
TO-220AB AUIRFB3207
D S
Gate
Drain
Source
Absolute Maximum Ratings
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (T A) is 25C, unless otherwise specified.
Parameter
ID @ TC = 25C ID @ TC = 100C ID @ TC = 25C IDM PD @TC = 25C VGS EAS IAR EAR dV/dt TJ TSTG Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (Package Limited) Pulsed Drain Current Maximum Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy (Thermally limited) Avalanche CurrentAd Repetitive Avalanche Energy Peak Diode Recovery Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) Mounting torque, 6-32 or M3 screw
Max.
170 120 75 720 300 2.0 20 910 See Fig. 14, 15, 16a, 16b, 5.8 -55 to + 175 300 10lbxin (1.1Nxm)
Units
A
d
W W/C V mJ A mJ V/ns C
e
f
Thermal Resistance
RJC RCS RJA Junction-to-Case Case-to-Sink, Flat Greased Surface , TO-220 Junction-to-Ambient, TO-220
j
Parameter
Typ.
--- 0.50 ---
Max.
0.50 --- 62
Units
C/W
HEXFET(R) is a registered trademark of International Rectifier. *Qualification standards can be found at http://www.irf.com/
www.irf.com
1
07/21/10
AUIRFB3207
Static Electrical Characteristics @ TJ = 25C (unless otherwise specified) Parameter Min. Typ. Max. Units
V(BR)DSS V(BR)DSS/TJ RDS(on) VGS(th) gfs RG IDSS IGSS Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Gate Input Resistance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage 75 --- --- 2.0 150 --- --- --- --- --- --- --- 0.069 --- 3.6 4.5 --- 4.0 --- --- 1.2 --- --- 20 --- 250 --- 200 --- -200
Conditions
V VGS = 0V, ID = 250A V/C Reference to 25C, ID = 1mAd m VGS = 10V, ID = 75A V VDS = VGS, ID = 250A S VDS = 50V, ID = 75A f = 1MHz, open drain VDS = 75V, VGS = 0V A VDS = 75V, VGS = 0V, TJ = 125C VGS = 20V nA VGS = -20V
g
Dynamic Electrical Characteristics @ TJ = 25C (unless otherwise specified) Parameter Min. Typ. Max. Units
Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Coss eff. (ER) Coss eff. (TR) Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Effective Output Capacitance (Energy Related) Effective Output Capacitance (Time Related)h --- --- --- --- --- --- --- --- --- --- --- --- 180 48 68 29 120 68 74 7600 710 390 920 1010 260 --- --- --- --- --- --- --- --- --- --- --- nC
Conditions
ID = 75A VDS = 60V VGS = 10V VDD = 48V ID = 75A RG = 2.6 VGS = 10V VGS = 0V VDS = 50V = 1.0MHz VGS = 0V, VDS = 0V to 60V , See Fig.11 VGS = 0V, VDS = 0V to 60V , See Fig. 5
g g
ns
iA
pF
Diode Characteristics
Parameter
IS ISM VSD trr Qrr IRRM ton Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)Adi Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current Forward Turn-On Time
Min. Typ. Max. Units
--- --- --- 170 A --- 720
Conditions
MOSFET symbol showing the integral reverse
G S D
--- --- 1.3 V --- 42 63 ns --- 49 74 --- 65 98 nC TJ = 125C --- 92 140 --- 2.6 --- A TJ = 25C Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
p-n junction diode. TJ = 25C, IS = 75A, VGS = 0V TJ = 25C VR = 64V, TJ = 125C IF = 75A di/dt = 100A/s TJ = 25C
g
g
Notes: Calculated continuous current based on maximum allowable junction Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS . temperature. Package limitation current is 75A. Coss eff. (ER) is a fixed capacitance that gives the same energy as Repetitive rating; pulse width limited by max. junction temperature. Coss while VDS is rising from 0 to 80% VDSS . Limited by TJmax, starting TJ = 25C, L = 0.33mH R is measured at TJ approximately 90C. RG = 25, IAS = 75A, VGS =10V. Part not recommended for use above this value. ISD 75A, di/dt 500A/s, VDD V(BR)DSS, TJ 175C. Pulse width 400s; duty cycle 2%.
2
www.irf.com
AUIRFB3207
Qualification Information
Automotive (per AEC-Q101) Qualification Level
Comments: This part number(s) passed Automotive qualification. IR's Industrial and Consumer qualification level is granted by extension of the higher Automotive level. 3L-TO-220 N/A Class M4(425V) (per AEC-Q101-002) Class H2(4000V) (per AEC-Q101-001) Class C5 (1125V) (per AEC-Q101-005) Yes
Moisture Sensitivity Level Machine Model Human Body Model Charged Device Model RoHS Compliant
ESD
Qualification standards can be found at International Rectifiers web site: http//www.irf.com/
Exceptions to AEC-Q101 requirements are noted in the qualification report.
www.irf.com
3
AUIRFB3207
1000
TOP
1000
ID, Drain-to-Source Current (A)
100
BOTTOM
ID, Drain-to-Source Current (A)
VGS 15V 10V 8.0V 6.0V 5.5V 5.0V 4.8V 4.5V
TOP
BOTTOM
VGS 15V 10V 8.0V 6.0V 5.5V 5.0V 4.8V 4.5V
100
10
4.5V 60s PULSE WIDTH Tj = 175C
10 0.1 1 10 100
4.5V
1 0.1 1
60s PULSE WIDTH Tj = 25C
10 100
VDS, Drain-to-Source Voltage (V)
VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
1000.0
2.5
Fig 2. Typical Output Characteristics
RDS(on) , Drain-to-Source On Resistance (Normalized)
ID = 75A
2.0
ID, Drain-to-Source Current()
TJ = 175C
100.0
VGS = 10V
TJ = 25C
1.5
10.0
1.0
VDS = 50V 60s PULSE WIDTH
1.0 4.0 5.0 6.0 7.0 8.0 9.0
0.5 -60 -40 -20 0 20 40 60 80 100 120 140 160 180
VGS, Gate-to-Source Voltage (V)
TJ , Junction Temperature (C)
Fig 3. Typical Transfer Characteristics
12000 VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED Crss = Cgd Coss = Cds + Cgd 8000
Fig 4. Normalized On-Resistance vs. Temperature
20
VGS, Gate-to-Source Voltage (V)
ID= 75A 16
10000
VDS = 60V VDS= 38V
C, Capacitance (pF)
Ciss
12
6000
8
4000
4
2000
Coss Crss
1 10 100
0
0 0 40 80 120 160 200 240 280 QG Total Gate Charge (nC)
VDS , Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
4
www.irf.com
AUIRFB3207
1000.0
10000
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
OPERATION IN THIS AREA LIMITED BY R DS (on)
100.0
TJ = 175C
1000
100
100sec
10.0
10
1.0
TJ = 25C
1
VGS = 0V
0.1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2
Tc = 25C Tj = 175C Single Pulse 1 10
1msec 10msec DC 100 1000
0.1
VSD, Source-to-Drain Voltage (V)
VDS , Drain-toSource Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
200 Limited By Package
ID, Drain Current (A)
Fig 8. Maximum Safe Operating Area
V(BR)DSS , Drain-to-Source Breakdown Voltage
100
150
90
100
80
50
0 25 50 75 100 125 150 175 T C , Case Temperature (C)
70 -60 -40 -20 0 20 40 60 80 100 120 140 160 180
TJ , Junction Temperature (C)
Fig 9. Maximum Drain Current vs. Case Temperature
EAS, Single Pulse Avalanche Energy (mJ)
3.0
Fig 10. Drain-to-Source Breakdown Voltage
4000
2.5
3000
ID 12A 16A BOTTOM 75A
TOP
2.0
Energy (J)
1.5
2000
1.0
1000
0.5
0.0 20 30 40 50 60 70 80
0 25 50 75 100 125 150 175
VDS, Drain-to-Source Voltage (V)
Starting TJ, Junction Temperature (C)
Fig 11. Typical COSS Stored Energy
Fig 12. Maximum Avalanche Energy Vs. DrainCurrent
www.irf.com
5
AUIRFB3207
1
D = 0.50
Thermal Response ( ZthJC )
0.1
0.20 0.10 0.05 0.02 0.01
J R1 R1 J 1 2 R2 R2 C 1 2
0.01
Ri (C/W) i (sec) 0.2151 0.001175 0.2350 0.017994
0.001
Ci= i/Ri Ci i/Ri
SINGLE PULSE ( THERMAL RESPONSE )
0.0001 1E-006 1E-005 0.0001 0.001
Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc
0.01 0.1
t1 , Rectangular Pulse Duration (sec)
Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case
100
Duty Cycle = Single Pulse
0.01 0.05 0.10
Allowed avalanche Current vs avalanche pulsewidth, tav, assuming Tj = 150C and Tstart =25C (Single Pulse)
Avalanche Current (A)
10
1
Allowed avalanche Current vs avalanche pulsewidth, tav, assuming j = 25C and Tstart = 150C.
0.1 1.0E-06
1.0E-05
1.0E-04 tav (sec)
1.0E-03
1.0E-02
1.0E-01
Fig 14. Typical Avalanche Current vs.Pulsewidth
1000
EAR , Avalanche Energy (mJ)
800
TOP Single Pulse BOTTOM 1% Duty Cycle ID = 75A
600
400
200
0 25 50 75 100 125 150 175
Notes on Repetitive Avalanche Curves , Figures 14, 15: (For further info, see AN-1005 at www.irf.com) 1. Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of Tjmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long as neither Tjmax nor Iav (max) is exceeded. 3. Equation below based on circuit and waveforms shown in Figures 22a, 22b. 4. PD (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 7. T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25C in Figure 14, 15). tav = Average time in avalanche. D = Duty cycle in avalanche = tav *f ZthJC(D, tav) = Transient thermal resistance, see Figures 13) PD (ave) = 1/2 ( 1.3*BV*Iav) = DT/ ZthJC Iav = 2DT/ [1.3*BV*Zth] EAS (AR) = PD (ave)*tav
Starting TJ , Junction Temperature (C)
Fig 15. Maximum Avalanche Energy vs. Temperature
6
www.irf.com
AUIRFB3207
5.0
16
VGS(th) Gate threshold Voltage (V)
4.5 4.0 3.5 3.0 2.5 2.0 1.5 -75 -50 -25 0 25 50 75
ID = 1.0A ID = 1.0mA ID = 250A
IRRM - (A)
14 12 10 8 6 4 2 IF = 30A VR = 64V TJ = 125C TJ = 25C 100 200 300 400 500 600 700 800 900 1000
100 125 150 175
TJ , Temperature ( C )
dif / dt - (A / s)
Fig 16. Threshold Voltage Vs. Temperature
16 14 12 10 8 6 4 2 IF = 45A VR = 64V TJ = 125C TJ = 25C
Fig. 17 - Typical Recovery Current vs. dif/dt
400
300
QRR - (nC)
IRRM - (A)
200
100
IF = 30A VR = 64V TJ = 125C TJ = 25C 100 200 300 400 500 600 700 800 900 1000
0
100 200 300 400 500 600 700 800 900 1000
dif / dt - (A / s)
dif / dt - (A / s)
Fig. 18 - Typical Recovery Current vs. dif/dt
400
Fig. 19 - Typical Stored Charge vs. dif/dt
300
QRR - (nC)
200
100
IF = 45A VR = 64V TJ = 125C TJ = 25C
0 100 200 300 400 500 600 700 800 900 1000
dif / dt - (A / s)
Fig. 20 - Typical Stored Charge vs. dif/dt
www.irf.com
7
AUIRFB3207
D.U.T
Driver Gate Drive
+
P.W.
Period
D=
P.W. Period VGS=10V
+
Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer
*
D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt
-
-
+
RG
* * * * dv/dt controlled by R G Driver same type as D.U.T. I SD controlled by Duty Factor "D" D.U.T. - Device Under Test
VDD
VDD
+ -
Re-Applied Voltage
Body Diode
Forward Drop
Inductor Curent Inductor Current
Ripple 5% ISD
* VGS = 5V for Logic Level Devices Fig 21. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET(R) Power MOSFETs
V(BR)DSS
15V
tp
DRIVER
VDS
L
RG
VGS 20V
D.U.T
IAS tp
+ V - DD
A
0.01
I AS
Fig 22a. Unclamped Inductive Test Circuit
LD VDS
Fig 22b. Unclamped Inductive Waveforms
+
VDD D.U.T VGS Pulse Width < 1s Duty Factor < 0.1%
90%
VDS
10%
VGS
td(on) tr td(off) tf
Fig 23a. Switching Time Test Circuit
Fig 23b. Switching Time Waveforms
Id Vds Vgs
L
0
DUT 1K
VCC
Vgs(th)
Qgs1 Qgs2
Qgd
Qgodr
Fig 24a. Gate Charge Test Circuit
Fig 24b. Gate Charge Waveform
8
www.irf.com
AUIRFB3207
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
TO-220AB Part Marking Information
Part Number
AUIRFB3207
IR Logo
YWWA
XX or XX
Date Code Y= Year WW= Work Week A= Automotive, Lead Free
Lot Code
www.irf.com
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
9
AUIRFB3207
Ordering Information
Base part AUIRFB3207 Package Type TO-220 Standard Pack Form Tube Complete Part Number Quantity 50 AUIRFB3207
10
www.irf.com
AUIRFB3207
IMPORTANT NOTICE
Unless specifically designated for the automotive market, International Rectifier Corporation and its subsidiaries (IR) reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue any product or services without notice. Part numbers designated with the "AU" prefix follow automotive industry and / or customer specific requirements with regards to product discontinuance and process change notification. All products are sold subject to IR's terms and conditions of sale supplied at the time of order acknowledgment. IR warrants performance of its hardware products to the specifications applicable at the time of sale in accordance with IR's standard warranty. Testing and other quality control techniques are used to the extent IR deems necessary to support this warranty. Except where mandated by government requirements, testing of all parameters of each product is not necessarily performed. IR assumes no liability for applications assistance or customer product design. Customers are responsible for their products and applications using IR components. To minimize the risks with customer products and applications, customers should provide adequate design and operating safeguards. Reproduction of IR information in IR data books or data sheets is permissible only if reproduction is without alteration and is accompanied by all associated warranties, conditions, limitations, and notices. Reproduction of this information with alterations is an unfair and deceptive business practice. IR is not responsible or liable for such altered documentation. Information of third parties may be subject to additional restrictions. Resale of IR products or serviced with statements different from or beyond the parameters stated by IR for that product or service voids all express and any implied warranties for the associated IR product or service and is an unfair and deceptive business practice. IR is not responsible or liable for any such statements. IR products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or in other applications intended to support or sustain life, or in any other application in which the failure of the IR product could create a situation where personal injury or death may occur. Should Buyer purchase or use IR products for any such unintended or unauthorized application, Buyer shall indemnify and hold International Rectifier and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that IR was negligent regarding the design or manufacture of the product. IR products are neither designed nor intended for use in military/aerospace applications or environments unless the IR products are specifically designated by IR as military-grade or "enhanced plastic." Only products designated by IR as military-grade meet military specifications. Buyers acknowledge and agree that any such use of IR products which IR has not designated as military-grade is solely at the Buyer's risk, and that they are solely responsible for compliance with all legal and regulatory requirements in connection with such use. IR products are neither designed nor intended for use in automotive applications or environments unless the specific IR products are designated by IR as compliant with ISO/TS 16949 requirements and bear a part number including the designation "AU". Buyers acknowledge and agree that, if they use any non-designated products in automotive applications, IR will not be responsible for any failure to meet such requirements
For technical support, please contact IR's Technical Assistance Center http://www.irf.com/technical-info/
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245 Tel: (310) 252-7105
www.irf.com
11

▲Up To Search▲

Price & Availability of AUIRFB3207

	To Download AUIRFB3207 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .